DocumentCode
959827
Title
Improved junction capacitance model for the GaAs MESFET
Author
Rodriguez-Tellez, J. ; Mezher, K. ; Al-Daas, M.
Author_Institution
Dept. of Electron. & Electr. Eng., Bradford Univ., UK
Volume
40
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2083
Lastpage
2085
Abstract
An empirical equation for simulating the bias dependency of the junction capacitances of the GaAs MESFET is presented and compared with existing techniques. It provides increased accuracy over a wide range of silicon and GaAs devices for microwave circuit design applications and up to 72% savings in CPU execution speed over existing techniques
Keywords
III-V semiconductors; Schottky gate field effect transistors; capacitance; gallium arsenide; semiconductor device models; solid-state microwave devices; CPU execution speed; GaAs; GaAs MESFET; bias dependency; junction capacitance model; microwave circuit design applications; Capacitance; Central Processing Unit; Circuit simulation; Equations; Gallium arsenide; MESFETs; Microwave devices; Parameter estimation; Silicon; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.239753
Filename
239753
Link To Document