DocumentCode
959837
Title
Note on charge conservation in the transient semiconductor equations
Author
Pfirsch, F. ; Ruff, M.
Author_Institution
Siemens AG Corporate Res. & Dev., Munich, Germany
Volume
40
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2085
Lastpage
2087
Abstract
A modification of the continuity equations for electrons and holes in materials with deep donors or acceptors is presented. The modification is necessary in order to prevent violation of charge conservation in transient simulations. The influence of incomplete ionization of dopants on the transient characteristics of a SiC power diode is demonstrated
Keywords
deep levels; power electronics; semiconductor device models; semiconductor diodes; semiconductor materials; silicon compounds; transient response; SiC power diode; charge conservation; continuity equations; deep acceptors; deep donors; incomplete dopant ionization; p-n--n+ diode; transient semiconductor equations; transient simulations; turn-off simulation; Capacitance; Charge carrier processes; Circuit simulation; Electron devices; Gallium arsenide; MESFET circuits; Microwave devices; Poisson equations; Silicon carbide; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.239754
Filename
239754
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