Title :
An overview of visible light emitting diode (LED) development and the potential for AlInGaP devices
Author :
Craford, M. George
Author_Institution :
Hewlett Packard Optoelectronics Div., San Jose, CA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. Recent developments in light-emitting diode (LED) materials growth and device properties are considered. The brightness of LEDs has increased in recent years, permitting new applications. Double heterostructure AlGaAs red LEDs on transparent `substrates´ are now commercially available for outdoor displays and signaling applications. Recently, AlInGaP LEDs grown by metalorganic chemical vapor disposition (MOCVD) have exhibited record performance in the yellow and red-orange spectral regions. External quantum efficiencies of greater than 5% and luminous performance as high as 20 lm/W at 590 nm have been reported. This performance is higher than that of conventional incandescent bulbs
Keywords :
III-V semiconductors; aluminium compounds; brightness; electroluminescent displays; gallium compounds; indium compounds; light emitting diodes; semiconductor growth; 5 percent; 590 nm; AlGaAs; AlInGaP devices; LED; MOCVD; brightness; device properties; double heterostructure AlGaAs red LED; external quantum efficiencies; growth; luminous performance; metalorganic chemical vapor disposition; outdoor displays; overview; red-orange spectral regions; signaling applications; transparent substrate; visible light emitting diode; yellow region; Brightness; Chemicals; Displays; Light emitting diodes; MOCVD; Marketing and sales; Micromechanical devices; Nanofabrication; Semiconductor devices; Semiconductor materials;
Journal_Title :
Electron Devices, IEEE Transactions on
