Title :
113-GHz fT graded-base SiGe HBT´s
Author :
Crabbe, Edward ; Meyerson, B. ; Harame, D. ; Megdanis, A. ; Cotte, J. ; Chu, James ; Gilbert, Markus ; Stanis, C. ; Comfort, J. ; Patton, G. ; Subbanna, S.
Author_Institution :
IBM T.J. Watson Res. Center, Yorktown Heights, NY
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. A novel low-thermal cycle process was used to fabricate epitaxial SiGe-base heterojunction bipolar transistors (HBTs) with record unity current gain cutoff frequencies. The process includes an in situ phosphorus-doped polysilicon emitter which requires only a 800°C-10-s anneal. A peak fT of 113 GHz at VCB of 1 V was obtained for an intrinsic base sheet resistance of 7 kΩ/□
Keywords :
Ge-Si alloys; S-parameters; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; solid-state microwave devices; 113 GHz; I-V characteristics; S-parameters; Si:P; SiGe; SiGe-base heterojunction bipolar transistors; anneal; graded base HBT; intrinsic base sheet resistance; low-thermal cycle process; polysilicon emitter; unity current gain cutoff frequencies; Annealing; Bridges; Cutoff frequency; Doping; Electron devices; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Semiconductor films; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
