Title :
Temperature and scaling behavior of strained-Si N-MOSFET´s
Author :
Welser, J. ; Hoyt, Judy L. ; Gibbons, J.F.
Author_Institution :
Solid State Electron. Lab., Stanford, CA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The device characteristics of N-MOSFETs fabricated in strained-Si have been investigated as a function of temperature and gate length. It is found that the low field mobility is enhanced compared to Si control devices at temperatures down at 20 K. For moderate fields, gm is enhanced at all measured temperatures, for effective gate lengths down to 0.8 μm (L drawn=1.5 μm). At high power density, however, the devices exhibit a negative differential output resistance. The thermal conductivity of the relaxed Si1-xGex buffer layers is estimated by fitting polysilicon resistor characteristics to a first order model
Keywords :
carrier mobility; insulated gate field effect transistors; negative resistance; semiconductor device testing; 0.8 micron; NMOSFET; device characteristics; first order model; gate length; high power density; low field mobility; negative differential output resistance; polysilicon resistor characteristics; relaxed Si1-xGex buffer layers; scaling behavior; strained Si; thermal conductivity; transconductance enhancement; Bipolar transistors; Electric breakdown; Feedback; Impact ionization; MOSFET circuits; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
