• DocumentCode
    959995
  • Title

    The self-consistent simulation of the modulation responses of quantum well lasers

  • Author

    Grupen, Matt ; Hess, K.

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Illinois Univ., Urbana, IL
  • Volume
    40
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    2105
  • Lastpage
    2106
  • Abstract
    Summary form only given. A self-consistent simulation (called MINILASE) that solves simultaneously the electrostatic, carrier transport, and optical problems in all areas of the device has been developed and used to calculate self-consistent modulation responses for a laser diode. The frequency responses of three single buried quantum well GaAs/AlGaAs lasers, each with a different type of cladding region, have been compared. One cladding region has constant Al concentration; another has a quadratically graded Al mole fraction; and the third is linearly graded. The calculations clearly show that the modulation response can be improved by exploiting the gradient in crystal potential that accompanies a graded cladding region
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser theory; optical modulation; semiconductor device models; semiconductor lasers; GaAs-AlGaAs; MINILASE; carrier transport; cladding region; crystal potential gradient; electrostatic problems; frequency responses; graded cladding region; laser diode; modulation responses; optical problems; quantum well lasers; self-consistent simulation; single buried quantum well GaAs/AlGaAs lasers; Damping; Equations; Gallium arsenide; Laser excitation; Laser modes; Laser theory; Pump lasers; Quantum computing; Quantum well devices; Quantum well lasers;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.239771
  • Filename
    239771