• DocumentCode
    960013
  • Title

    A New Property of Etched Niobium Wet Electrolytic Capacitors

  • Author

    Burnham, John

  • Author_Institution
    Ti-Tal,Inc., CA
  • Volume
    3
  • Issue
    1
  • fYear
    1967
  • fDate
    3/1/1967 12:00:00 AM
  • Firstpage
    21
  • Lastpage
    25
  • Abstract
    An etched niobium capacitor has been made which shows about a ten to one change in capacitance from zero bias to the rated voltage. The approximate relation between the capacitance and the bias has been found to obey the following equation C= Co (V + gb)~J2´ If we assume the eontaet potential Vbto be 0.80 volts, and (C/Co)2is plotted versus 1/V + Vb, we obtain a straight line, thus showing that we are dealing with a p-n junction either at the oxide-solution interface or at an interfaee within the oxide layer. The large bias-effect suggests the possibility of the use of such a eomponent in eontrol circuits at low frequencies in a manner similar to a varaetor diode at high frequencies. Additional Key Words (for Information Retrieval)--niobium, electrolytic capacitor, variable capacitor, solid-state variable capacitor.
  • Keywords
    Electrolytic capacitors; Niobium; Solid-state variable capacitor; Variable capacitor; Capacitance; Capacitors; Circuits; Diodes; Equations; Frequency; Niobium; P-n junctions; Voltage; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Parts, Materials and Packaging, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9502
  • Type

    jour

  • DOI
    10.1109/TPMP.1967.1135712
  • Filename
    1135712