DocumentCode
960013
Title
A New Property of Etched Niobium Wet Electrolytic Capacitors
Author
Burnham, John
Author_Institution
Ti-Tal,Inc., CA
Volume
3
Issue
1
fYear
1967
fDate
3/1/1967 12:00:00 AM
Firstpage
21
Lastpage
25
Abstract
An etched niobium capacitor has been made which shows about a ten to one change in capacitance from zero bias to the rated voltage. The approximate relation between the capacitance and the bias has been found to obey the following equation C= Co (V + gb)~J2´ If we assume the eontaet potential Vb to be 0.80 volts, and (C/Co)2is plotted versus 1/V + Vb , we obtain a straight line, thus showing that we are dealing with a p-n junction either at the oxide-solution interface or at an interfaee within the oxide layer. The large bias-effect suggests the possibility of the use of such a eomponent in eontrol circuits at low frequencies in a manner similar to a varaetor diode at high frequencies. Additional Key Words (for Information Retrieval)--niobium, electrolytic capacitor, variable capacitor, solid-state variable capacitor.
Keywords
Electrolytic capacitors; Niobium; Solid-state variable capacitor; Variable capacitor; Capacitance; Capacitors; Circuits; Diodes; Equations; Frequency; Niobium; P-n junctions; Voltage; Wet etching;
fLanguage
English
Journal_Title
Parts, Materials and Packaging, IEEE Transactions on
Publisher
ieee
ISSN
0018-9502
Type
jour
DOI
10.1109/TPMP.1967.1135712
Filename
1135712
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