Curved and tapered waveguide mode-locked InGaAs/AlGaAs semiconductor lasers fabricated by impurity induced disordering

Author

Helkey, Roger ; Zou, Wei-xia ; Mar, Alan ; Young, D.B.

Author_Institution

California Univ., Santa Barbara, CA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2107

Abstract

Summary form only given. Modelocking using curved waveguide devices for low facet reflectivity and using tapered waveguide devices for high output power has been demonstrated. Strong suppression of reflection-seeded secondary pulses was observed for curved waveguides, and increased output power for tapered waveguides. InGaAs/AlGaAs quantum-well semiconductor diode lasers were fabricated using impurity induced disordering. The waveguide has a linear taper from 2.5 μm to 7.5 μm width over a 150 μm distance. The modelocked output pulse energy was increased to 4.1 pJ, compared to 1.8 pJ for a similar 2.5 μm waveguide untapered device

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mode locking; optical waveguides; optical workshop techniques; semiconductor lasers; 2.5 to 7.5 micron; 4.1 pJ; InGaAs-AlGaAs; curved waveguide devices; high output power; impurity induced disordering; linear taper; low facet reflectivity; mode locking; modelocked output pulse energy; quantum-well semiconductor diode lasers; reflection seeded secondary pulse suppression; semiconductor lasers; tapered waveguide devices; Indium gallium arsenide; Laser modes; Power generation; Quantum well lasers; Reflectivity; Semiconductor diodes; Semiconductor impurities; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239774

Filename

239774