Pseudomorphic SCH blue-green diode lasers

Author

Grillo, D.C. ; Fan, Y. ; Han, Jinguang ; He, Lifang ; Gunshor, R.L. ; Jeon, Hyung-Joon ; Salokatve, A. ; Hagerott, M. ; Nurmikko, A.V. ; Otsuka, N. ; Oh, E. ; Ramdas, Anant K.

Author_Institution

Purdue Univ., West Lafayette, IN

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2109

Abstract

Summary form only given. The use of the quaternary (Zn,Mg)(S,Se) in a diode laser operating at 77 K has been reported. Such a quaternary compound can maintain lattice compatibility to GaAs with increased bandgap for the implementation of separate confinement heterostructure (SCH) quantum-well lasers. In the present work, the authors describe efforts to employ the quaternary in pseudomorphic SCH diode configurations. These preliminary devices (without heat sinking or coated facets) have been operated at room temperature under pulsed conditions (~1 μs, 10^-3 duty cycle) for periods exceeding 1/2 h before failure. A group at Phillips laboratories has recently obtained nearly 400 K operation with 10 to 50 ns pulses in a similar structure

Keywords

magnesium compounds; semiconductor lasers; semiconductor materials; sulphur compounds; zinc compounds; 10 to 50 ns; 20 degC; 400 K; Phillips laboratories; ZnMgSSe; bandgap; blue-green diode lasers; pseudomorphic SCH diode configurations; pulsed conditions; quantum-well lasers; quaternary compound; room temperature; separate confinement heterostructure; Diode lasers; Gallium arsenide; Lattices; Light emitting diodes; Ohmic contacts; Optical arrays; Optical devices; Quantum well devices; Temperature; Zinc compounds;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239779

Filename

239779