Title :
Pseudomorphic SCH blue-green diode lasers
Author :
Grillo, D.C. ; Fan, Y. ; Han, Jinguang ; He, Lifang ; Gunshor, R.L. ; Jeon, Hyung-Joon ; Salokatve, A. ; Hagerott, M. ; Nurmikko, A.V. ; Otsuka, N. ; Oh, E. ; Ramdas, Anant K.
Author_Institution :
Purdue Univ., West Lafayette, IN
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The use of the quaternary (Zn,Mg)(S,Se) in a diode laser operating at 77 K has been reported. Such a quaternary compound can maintain lattice compatibility to GaAs with increased bandgap for the implementation of separate confinement heterostructure (SCH) quantum-well lasers. In the present work, the authors describe efforts to employ the quaternary in pseudomorphic SCH diode configurations. These preliminary devices (without heat sinking or coated facets) have been operated at room temperature under pulsed conditions (~1 μs, 10-3 duty cycle) for periods exceeding 1/2 h before failure. A group at Phillips laboratories has recently obtained nearly 400 K operation with 10 to 50 ns pulses in a similar structure
Keywords :
magnesium compounds; semiconductor lasers; semiconductor materials; sulphur compounds; zinc compounds; 10 to 50 ns; 20 degC; 400 K; Phillips laboratories; ZnMgSSe; bandgap; blue-green diode lasers; pseudomorphic SCH diode configurations; pulsed conditions; quantum-well lasers; quaternary compound; room temperature; separate confinement heterostructure; Diode lasers; Gallium arsenide; Lattices; Light emitting diodes; Ohmic contacts; Optical arrays; Optical devices; Quantum well devices; Temperature; Zinc compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
