Improved charge control and the frequency performance in InAs/AlSb HFET´s

Summary form only given. It is shown how the well thickness and the buffer layers influence the charge control properties of InAs/AlSb HFETs (heterostructure field-effect transistors) and how the kink can be eliminated from the drain characteristics of micron-sized HFETs, resulting in low output conductances and well-behaved drain characteristics. It is also demonstrated that a proper buffer layer structure is most beneficial in submicron devices, and results in great improvements in operational range and frequency performance