Single-transverse mode, low threshold current vertical-cavity surface-emitting laser

Author

Wu, Yimin A. ; Chang-Hasnain, Connie J. ; Li, G.S. ; Nabiev, Rustam ; Caneau, Catherine ; Florez, L.T. ; Choquette, Kent D. ; Hasnain, G.

Author_Institution

Ginzton Lab., Stanford Univ., CA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2116

Lastpage

2117

Abstract

Summary form only given. The authors report buried heterostructure (BH) vertical cavity surface emitting lasers (VCSELs) emitting a single TEM₀₀ mode with a predetermined polarization and low-threshold currents. A threshold current of 0.8 mA and a record-low threshold-density of 490 A/cm² have been achieved with 8 and 32 μm diameter lasers, respectively. The VCSEL heterostructure used includes three InGaAs strained quantum wells, and 15 and 20.5 pairs of GaAs-AlAs as the top and bottom Bragg reflectors, respectively, grown by molecular beam epitaxy. The threshold currents of 8, 16, and 32 μm BH VCSELs are 0.8, 1.2, and 3.5 mA, respectively. Both the 8 and 16 μm BH VCSELs emit a single TEM₀₀ mode up to four to five times threshold. The emission is linearly polarized in a predetermined direction. The stable single-mode behavior is attributed to the combination of index-guiding in the active region and anti-index-guiding in the Bragg reflectors

Keywords

III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical waveguides; semiconductor lasers; vapour phase epitaxial growth; 0.8 to 3.5 mA; 16 micron; 32 micron; 8 micron; BH VCSELs; Bragg reflectors; GaAs-AlAs; InGaAs strained quantum wells; MBE growth; anti-index-guiding; buried heterostructure; index-guiding; linearly polarized; low threshold current; molecular beam epitaxy; single TEM₀₀ mode; stable single-mode behavior; vertical-cavity surface-emitting laser; Chemical lasers; Laser modes; Molecular beam epitaxial growth; Optical polarization; Pulse measurements; Pulsed laser deposition; Quantum well lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239789

Filename

239789