Title :
Continuous wave visible InGaP/InGaAlP quantum-well surface-emitting laser diodes
Author :
Huang, K.F. ; Tai, K. ; Wu, C.C. ; Wynn, J.D.
Author_Institution :
Chiao Tung Univ., Hsinchu
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. Vertical-cavity surface-emitting lasers in the 0.66 μm visible spectral region were fabricated by metal-organic chemical vapor deposition. The laser structure consists of four In0.5Ga0.5P (80 Å)/In0.5Al 0.5GaP (60Å) quantum wells as the active medium. The quantum wells are located in the middle of a one λ-thick cavity spacer, which is sandwiched between two highly reflective staircase-distributed Bragg reflectors. The continuous wave threshold currents, Ith, are 3.9 and 4.6 mA at -75 and -25°C, respectively, for 15 μm diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an Ith of 12 mA at 25°C
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; vapour phase epitaxial growth; -75 to -25 degC; 0.66 micron; 12 mA; 15 micron; 25 degC; 3.9 mA; 4.6 mA; CW output; In0.5Ga0.5P-In0.5Al0.5 GaP; MOCVD; continuous wave threshold currents; metal-organic chemical vapor deposition; quantum-well surface-emitting laser diodes; room temperature pulsed mode operation; staircase-distributed Bragg reflectors; vertical cavity; visible spectral region; Chemical lasers; Chemical vapor deposition; Laser modes; Pulsed laser deposition; Quantum well lasers; Quantum wells; Surface emitting lasers; Surface waves; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Electron Devices, IEEE Transactions on
