Low threshold, electrically injected InGaAsP (1.3 μm) vertical cavity lasers on GaAs substrates

Author

Dudley, John J. ; Babic, D.I. ; Mirin, R. ; Yang, Lei ; Miller, B.I. ; Ram, R.J. ; Reynolds, Tim ; Hu, E.L. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2119

Lastpage

2120

Abstract

Summary form only given. Electrically injected long-wavelength vertical cavity lasers (VCLs) employing InGaAsP (1.3 μm) active regions fused to GaAs-AlAs mirrors on GaAs substrates are demonstrated. The lasers operate pulsed at room temperature (300 K) with a threshold current of 9 mA and a threshold current density of 9.5 kA/cm². These devices operate CW (continuous wave) at temperatures as high as 230 K; the CW threshold current at 230 K is 3.6 mA. The use of the GaAs-AlAs mirror makes the device more mechanically robust, improving the thermal conductivity and reducing problems with nonuniform injection

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser transitions; semiconductor lasers; 1.3 micron; 230 K; 293 K; 3.6 mA; 9 mA; GaAs substrates; GaAs-AlAs mirrors; InGaAsP; continuous wave; electrically injected; long-wavelength; room temperature pulsed operation; thermal conductivity; threshold current; vertical cavity lasers; Dielectric substrates; Gallium arsenide; Indium phosphide; Laser transitions; Mirrors; Quantum well lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239794

Filename

239794