Vertical-cavity surface-emitting lasers with 14 GHz bandwidth

Author

Brusenbach, P. ; Uchida, T.K. ; Parsons, C. ; Kim, M. ; Quinn, W.E. ; Swirhun, S.E. ; Shtengel, G. ; Temkin, H.

Author_Institution

Bandgap Technol. Corp., Broomfield, CO, USA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2120

Abstract

Summary form only given. A maximum bandwidth of 14 GHz was observed in a study of small-diameter vertical-cavity surface emitting lasers (VCSELs). Gain-guided VCSELs from two wafers were used, nominally lasing at either 780 nm or 960 nm. Modulation experiments showed a very high frequency-square root of power coefficient D=10 GHz/mW^1/2. The maximum bandwidth of 13.7 GHz was reached at 20°C (and 14.7 GHz at 7°C) at a current of 8 mA for the 780 nm laser with a cavity diameter of 6 μm. The cavity region of these lasers received both a broad area proton implant and a second deep implant centered at the active region to better define the cavity diameter. The 960 nm lasers received only the first broad area implant and their measured response of 10 GHz indicates the importance of minimizing lateral carrier diffusion

Keywords

laser cavity resonators; optical modulation; semiconductor lasers; 13.7 to 14.7 GHz; 6 micron; 7 to 20 degC; 780 nm; 8 mA; 960 nm; broad area proton implant; deep implant; gain guided VCSEL; maximum bandwidth; modulation; small-diameter vertical-cavity; surface-emitting lasers; Bandwidth; Circuits; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239795

Filename

239795