Title :
High-speed, high breakdown voltage InP/InGaAs double-heterojunction bipolar transistors grown by MOMBE
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The authors report very-high-performance InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with low output conductance and high breakdown voltage of at least 5.5 V at high current densities, with measured BVCEO and BVCBO of >7.5 V and 10.6 V, respectively. The 11 μm2 devices exhibited fT of 134 GHz and fmax of 113 GHz at VCE=1.57 V and IC=16.22 mA. The epitaxial structure was grown by metal-organic molecular beam epitaxy (MOMBE) using tertiarybutylarsine and tertiarybutylphosphine as the group-V sources
Keywords :
III-V semiconductors; chemical beam epitaxial growth; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; solid-state microwave devices; 113 GHz; 134 GHz; 16.22 mA; 5.5 V; DHBTs; HBT; InP-InGaAs; MOMBE; double-heterojunction bipolar transistors; epitaxial structure; group-V sources; high breakdown voltage; high speed operation; low output conductance; metal-organic molecular beam epitaxy; tertiarybutylarsine; tertiarybutylphosphine; Bipolar transistors; Breakdown voltage; Current measurement; Cutoff frequency; Doping profiles; Electrons; Indium gallium arsenide; Indium phosphide; Message-oriented middleware; Molecular beam epitaxial growth;
Journal_Title :
Electron Devices, IEEE Transactions on
