Influence of launching energy on collector transport in InP/InGaAs double-heterojunction bipolar transistors

Author

Kurishima, Kenji ; Kobayashi, Takehiko ; Matsuoka, Yasutaka

Author_Institution

NTT LSI Labs., Kanagawa

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2121

Lastpage

2122

Abstract

Summary form only given. The authors report the drastic change of electron velocity in InP/InGaAs DHBT (double-heterojunction bipolar transistor) collectors, depending on the collector potential profile. By increasing the electron injection energy into the InP collector, electron transport in the satellite valleys becomes significant, leading to velocity reduction from 3.5×10⁷ cm/s to 1.6×10 ⁷ cm/s. Γ-valley-dominated transport is at least more than twice as fast as upper-valley-dominated transport. Consequently, nonequilibrium transport in the InP collector plays an essential role in determining the high-speed performance of InP/InGaAs DHBTs. This experiment used DHBT structures grown by MOCVD (metal-organic chemical vapor deposition)

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; heterojunction bipolar transistors; indium compounds; vapour phase epitaxial growth; Γ-valley-dominated transport; DHBT; HBT; InP collector; InP-InGaAs; MOCVD; collector potential profile; collector transport; double-heterojunction bipolar transistors; electron injection energy; electron transport; electron velocity; high-speed performance; launching energy; metal-organic chemical vapor deposition; nonequilibrium transport; satellite valleys; upper-valley-dominated transport; velocity reduction; Delay; Doping; Electrons; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Laboratories; Large scale integration; MOCVD; Zinc;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239797

Filename

239797