DocumentCode
960314
Title
High-f max AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions
Author
Shimawaki, Hidetaka ; Amamiya, Y. ; Furuhata, N. ; Honjo, Kazuhiko
Author_Institution
NEC Corp., Ibaraki
Volume
40
Issue
11
fYear
1993
fDate
11/1/1993 12:00:00 AM
Firstpage
2124
Abstract
Summary form only given. AlGaAs/GaAs and AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with excellent microwave performance are reported. An f T of 102 GHz and an f max of 224 GHz are achieved, using selective growth of heavily C-doped GaAs layers in extrinsic base regions, in combination with a 40-nm-thick compositionally graded InGaAs base structure
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 102 GHz; 224 GHz; AlGaAs-GaAs; AlGaAs-InGaAs; AlGaAs/GaAs; AlGaAs/InGaAs; MOMBE selective growth; compositionally graded base structure; extrinsic base regions; heterojunction bipolar transistors; microwave performance; selective growth; Contact resistance; Doping; Gallium arsenide; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Laboratories; Microelectronics; National electric code; Radio frequency;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.239801
Filename
239801
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