Title :
High-fmax AlGaAs/InGaAs and AlGaAs/GaAs HBTs fabricated with MOMBE selective growth in extrinsic base regions
Author :
Shimawaki, Hidetaka ; Amamiya, Y. ; Furuhata, N. ; Honjo, Kazuhiko
Author_Institution :
NEC Corp., Ibaraki
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. AlGaAs/GaAs and AlGaAs/InGaAs heterojunction bipolar transistors (HBTs) with excellent microwave performance are reported. An fT of 102 GHz and an fmax of 224 GHz are achieved, using selective growth of heavily C-doped GaAs layers in extrinsic base regions, in combination with a 40-nm-thick compositionally graded InGaAs base structure
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor epitaxial layers; semiconductor growth; solid-state microwave devices; 102 GHz; 224 GHz; AlGaAs-GaAs; AlGaAs-InGaAs; AlGaAs/GaAs; AlGaAs/InGaAs; MOMBE selective growth; compositionally graded base structure; extrinsic base regions; heterojunction bipolar transistors; microwave performance; selective growth; Contact resistance; Doping; Gallium arsenide; Gold; Heterojunction bipolar transistors; Indium gallium arsenide; Laboratories; Microelectronics; National electric code; Radio frequency;
Journal_Title :
Electron Devices, IEEE Transactions on
