Title :
A 0.5-μm EEPROM cell using poly-Si TFT technology
Author :
Sato, Akira ; Momiyama, Youichi ; Nara, Yumiko ; Sugii, Toshihiro ; Arimoto, Yasushi ; Ito, Takao
Author_Institution :
Fujitsu Labs. Ltd., Atsugi
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. A 0.5-μm EEPROM (electrically erasable programmable read only memory) cell using poly-Si thin-film transistor (TFT) technology is reported. 10-μs programming time and a good endurance over 104 program/erase cycles were obtained. These device characteristics are promising for low-cost and high-density EEPROMs
Keywords :
EPROM; MOS integrated circuits; VLSI; integrated circuit technology; integrated memory circuits; thin film transistors; 0.5 micron; 10 mus; EEPROM cell; device characteristics; electrically erasable programmable read only memory; endurance; high-density EEPROMs; poly-Si TFT technology; programming time; thin-film transistor; EPROM; Geometry; Lithography; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
