• DocumentCode
    960341
  • Title

    A 0.5-μm EEPROM cell using poly-Si TFT technology

  • Author

    Sato, Akira ; Momiyama, Youichi ; Nara, Yumiko ; Sugii, Toshihiro ; Arimoto, Yasushi ; Ito, Takao

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi
  • Volume
    40
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    2126
  • Abstract
    Summary form only given. A 0.5-μm EEPROM (electrically erasable programmable read only memory) cell using poly-Si thin-film transistor (TFT) technology is reported. 10-μs programming time and a good endurance over 104 program/erase cycles were obtained. These device characteristics are promising for low-cost and high-density EEPROMs
  • Keywords
    EPROM; MOS integrated circuits; VLSI; integrated circuit technology; integrated memory circuits; thin film transistors; 0.5 micron; 10 mus; EEPROM cell; device characteristics; electrically erasable programmable read only memory; endurance; high-density EEPROMs; poly-Si TFT technology; programming time; thin-film transistor; EPROM; Geometry; Lithography; Thin film transistors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.239804
  • Filename
    239804
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=960341