• DocumentCode
    960350
  • Title

    Characterization of three commercially available Hall effect sensors for low temperatures and magnetic fields to 23 T

  • Author

    Sample, H.H. ; Rubin, L.G.

  • Author_Institution
    Tufts University, Medford, Massachusetts
  • Volume
    12
  • Issue
    6
  • fYear
    1976
  • fDate
    11/1/1976 12:00:00 AM
  • Firstpage
    810
  • Lastpage
    812
  • Abstract
    Low temperature measurements were made on commercially supplied InAs, InSb, and GaAs Hall probes in magnetic fields as high as 23 T. For fields above ∼6 T, the quantum oscillations observed for the GaAs probes were comparable in magnitude to those exhibited by the other two types, i.e., l\\sim2 %. At lower fields, the sensitivities of both the GaAs and InSb sensors were different from their respective high field values; this behavior was absent in the case of the InAs probes. All three types of probes shared the advantage of reasonably good reproducibility with respect to thermal cycling and magnetic field cycling.
  • Keywords
    Cryogenic materials/devices; Gallium materials/devices; Hall effect; Indium materials/devices; Magnetic transducers; Gallium arsenide; Hall effect; Hall effect devices; Magnetic field measurement; Magnetic fields; Magnetic sensors; Probes; Reproducibility of results; Temperature sensors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1976.1059250
  • Filename
    1059250