DocumentCode
960350
Title
Characterization of three commercially available Hall effect sensors for low temperatures and magnetic fields to 23 T
Author
Sample, H.H. ; Rubin, L.G.
Author_Institution
Tufts University, Medford, Massachusetts
Volume
12
Issue
6
fYear
1976
fDate
11/1/1976 12:00:00 AM
Firstpage
810
Lastpage
812
Abstract
Low temperature measurements were made on commercially supplied InAs, InSb, and GaAs Hall probes in magnetic fields as high as 23 T. For fields above ∼6 T, the quantum oscillations observed for the GaAs probes were comparable in magnitude to those exhibited by the other two types, i.e.,
%. At lower fields, the sensitivities of both the GaAs and InSb sensors were different from their respective high field values; this behavior was absent in the case of the InAs probes. All three types of probes shared the advantage of reasonably good reproducibility with respect to thermal cycling and magnetic field cycling.
%. At lower fields, the sensitivities of both the GaAs and InSb sensors were different from their respective high field values; this behavior was absent in the case of the InAs probes. All three types of probes shared the advantage of reasonably good reproducibility with respect to thermal cycling and magnetic field cycling.Keywords
Cryogenic materials/devices; Gallium materials/devices; Hall effect; Indium materials/devices; Magnetic transducers; Gallium arsenide; Hall effect; Hall effect devices; Magnetic field measurement; Magnetic fields; Magnetic sensors; Probes; Reproducibility of results; Temperature sensors; Voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1976.1059250
Filename
1059250
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