Numerical simulations of on and off state characteristics of polysilicon thin film transistors

Summary form only given. Good agreement between numerical simulations and experimental data on the electrical characteristics of polycrystalline silicon (poly-Si) thin film transistors (TFTs) is shown. The field-effect mobility, threshold voltage, leakage current, and kink effect are examined. It is shown how the on-state performance of these devices can be modeled using an effective medium approach. Leakage currents are modeled by adding a single tunneling trap with a temperature-independent tunneling mechanism. The bias, temperature, and statistical behavior of leakage currents in poly-Si TFTs have been successfully simulated