a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition

Author

Wright, S.L. ; Rothwell, M.B. ; Souk, J.H. ; kuo, jay

Author_Institution

IBM T. J. Watson Res. Center, Yorktown Heights, NY

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2128

Lastpage

2129

Abstract

Summary form only given. Dilute-gas plasma-enhanced chemical vapor deposition (PECVD) has been used to fabricate high-quality amorphous silicon (a-Si) thin film transistors (TFTs) which are suitable for active-matrix liquid-crystal displays. All PECVD layers were deposited using silane diluted to 2% in He or H₂, which greatly reduces the explosion hazards associated with silane. The quality of a-Si produced by low-power, He-diluted silane at rates of ~1 Å/s is comparable to that made with pure silane. He dilution has also been utilized to control the properties of SiO₂ and SiN_x insulators deposited by PECVD. Using this approach, the effects of several material aspects on TFT characteristics were examined. The TFT structures were bottom-gate, inverted-staggered devices with deposited n⁺ microcrystalline silicon contacts

Keywords

amorphous semiconductors; elemental semiconductors; liquid crystal displays; plasma CVD; silicon; silicon compounds; thin film transistors; PECVD; Si-SiN_x; Si-SiO₂; SiN_x insulators; SiO₂ insulators; active-matrix liquid-crystal displays; amorphous silicon; dilute-gas plasma-enhanced chemical vapor deposition; explosion hazards; inverted-staggered devices; thin film transistors; Active matrix liquid crystal displays; Amorphous silicon; Chemical vapor deposition; Explosions; Hazards; Helium; Plasma chemistry; Plasma displays; Silicon compounds; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239808

Filename

239808