Title :
a-Si thin film transistors using dilute-gas plasma-enhanced chemical vapor deposition
Author :
Wright, S.L. ; Rothwell, M.B. ; Souk, J.H. ; kuo, jay
Author_Institution :
IBM T. J. Watson Res. Center, Yorktown Heights, NY
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. Dilute-gas plasma-enhanced chemical vapor deposition (PECVD) has been used to fabricate high-quality amorphous silicon (a-Si) thin film transistors (TFTs) which are suitable for active-matrix liquid-crystal displays. All PECVD layers were deposited using silane diluted to 2% in He or H2, which greatly reduces the explosion hazards associated with silane. The quality of a-Si produced by low-power, He-diluted silane at rates of ~1 Å/s is comparable to that made with pure silane. He dilution has also been utilized to control the properties of SiO2 and SiNx insulators deposited by PECVD. Using this approach, the effects of several material aspects on TFT characteristics were examined. The TFT structures were bottom-gate, inverted-staggered devices with deposited n+ microcrystalline silicon contacts
Keywords :
amorphous semiconductors; elemental semiconductors; liquid crystal displays; plasma CVD; silicon; silicon compounds; thin film transistors; PECVD; Si-SiNx; Si-SiO2; SiNx insulators; SiO2 insulators; active-matrix liquid-crystal displays; amorphous silicon; dilute-gas plasma-enhanced chemical vapor deposition; explosion hazards; inverted-staggered devices; thin film transistors; Active matrix liquid crystal displays; Amorphous silicon; Chemical vapor deposition; Explosions; Hazards; Helium; Plasma chemistry; Plasma displays; Silicon compounds; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
