• DocumentCode
    960391
  • Title

    Excimer-laser crystallized poly-Si TFTs with mobility of more than 600 cm2/Vs

  • Author

    Choi, Dae Hyun ; Sugiura, O. ; Matsumura, Mieko

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol.
  • Volume
    40
  • Issue
    11
  • fYear
    1993
  • fDate
    11/1/1993 12:00:00 AM
  • Firstpage
    2129
  • Abstract
    Summary form only given. The authors present excimer-laser-crystallized poly-Si TFTs (thin-film transistors) with a field-effect mobility of greater than 600 cm2/Vs, which is more than 50% higher than the best value reported to date. The TFT structure, the novel process, and the mechanism for the superior TFT performances are discussed. The results obtained indicate that reduction of heat removal rate from the molten Si layer during an excimer-laser-crystallization step is a key way to improve the performance of poly-Si TFTs on a glass substrate
  • Keywords
    carrier mobility; excimer lasers; laser beam applications; semiconductor technology; thin film transistors; excimer-laser-crystallization step; excimer-laser-crystallized poly-Si TFTs; field-effect mobility; glass substrate; heat removal rate; Conductivity; Crystallization; MOSFETs; Photonic band gap; Rectifiers; Temperature; Thin film transistors; Thyristors; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.239809
  • Filename
    239809
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=960391