MOS characterization of thermally oxided 6H silicon carbide

Author

Sanders, J.W. ; Pan, Jeng-Shyang ; Xie, Meihua ; Sheppard, S.T. ; Mathur, Manisha ; Melloch, M.R.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2130

Lastpage

2131

Abstract

Summary form only given. An MOS evaluation of the SIO₂/SiC interface as a function of oxidation conditions and substrate doping is reported. 6H SiC (Si face) epitaxial wafers were thermally oxidized in both wet and dry ambients. MOS capacitors were formed by thermally evaporating circular aluminium field plates. Capacitance transient (C-t) measurements have been performed at elevated temperatures (260-370°C). Approximate values for intrinsic carrier concentration n_i as a function of temperature in the range 270-360°C have been obtained directly from the measured C-V curve. These n_i values are more than two orders of magnitude larger than would be calculated by extrapolating the accepted room temperature value. Based on these n_i values, bulk generation lifetime τ _G and surface generation velocity S₀ are calculated for an n-type sample using a modified Zerbst technique. Both τ_G and S₀ are within about a factor of 20 of the best reported silicon values

Keywords

carrier lifetime; metal-insulator-semiconductor devices; oxidation; semiconductor materials; semiconductor-insulator boundaries; silicon compounds; 260 to 370 degC; C-V curve; MOS capacitors; MOS evaluation; SIO₂/SiC interface; SiO₂-SiC; bulk generation lifetime; capacitance transient; dry ambients; modified Zerbst technique; oxidation conditions; substrate doping; surface generation velocity; wet ambients; Capacitance; Capacitance-voltage characteristics; Conductivity; Doping; Fabrication; Passivation; Schottky diodes; Silicon carbide; Temperature; Testing;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239812

Filename

239812