• DocumentCode
    960432
  • Title

    Some Basic Physical Properties of Silicon and How They Relate to Rectifier Design and Application

  • Author

    Finn, G. ; Parsons, R.

  • Author_Institution
    Sarkes Tarzian, Inc., Rectifier Div., Bloomington, Ind.
  • Volume
    3
  • Issue
    3
  • fYear
    1956
  • fDate
    12/1/1956 12:00:00 AM
  • Firstpage
    110
  • Lastpage
    113
  • Abstract
    The saturation range and the avalanche range of the reverse characteristic of a silicon rectifier and how these regions vary qualitatively with temperature and bulk characteristics of the silicon used are discussed. Also some reasons why these characteristics may vary from theoretical values are given. The forward current is discussed from the standpoint of the resistive component and conductivity modulation. The affects of temperature, device geometry, and bulk characteristics of both of these components are shown. In a general fashion, some problems concerning operating life and shelf life of packaged rectifiers are given.
  • Keywords
    Conducting materials; Conductivity; Crystalline materials; Doping; Equations; Fabrication; Rectifiers; Semiconductor diodes; Silicon alloys; Voltage;
  • fLanguage
    English
  • Journal_Title
    Component Parts, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0096-2422
  • Type

    jour

  • DOI
    10.1109/TCP.1956.1135759
  • Filename
    1135759