Title :
AlGaN solar-blind Schottky photodiodes fabricated on 4H-SiC
Author :
Jiang, H. ; Egawa, T. ; Ishikawa, H.
Author_Institution :
Res. Center for Nano-Device & Syst., Nagoya Inst. of Technol.
fDate :
6/1/2006 12:00:00 AM
Abstract :
Solar-blind AlGaN-based Schottky photodiodes grown on 4H-SiC substrate are reported. The fabricated devices demonstrate dark current density as low as 2.2times10-10 A/cm2 at a reverse bias of 5 V. A zero-bias peak responsivity of 44 mA/W was achieved at 256 nm, corresponding to an external quantum efficiency of 21%. Under a low illumination power density of 10 nW/cm2, a rejection ratio of more than two orders of magnitude was observed in the wavelength range from 270 to 310 nm. A room-temperature solar-blind detectivity of 7.9times1014 cmmiddotHz1/2W-1 was estimated at 256 nm under zero bias
Keywords :
III-V semiconductors; Schottky diodes; aluminium compounds; current density; dark conductivity; gallium compounds; photodiodes; wide band gap semiconductors; 21 percent; 256 nm; 270 to 310 nm; 4H-SiC substrate; 5 V; AlGaN; AlGaN solar-blind Schottky photodiodes; SiC; dark current density; external quantum efficiency; zero-bias peak responsivity; Aluminum gallium nitride; Dark current; Detectors; Lattices; Photodetectors; Photodiodes; Photovoltaic systems; Silicon carbide; Solar power generation; Substrates; AlGaN; Schottky photodiode; dark current; responsivity; solar blind;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.877351