Low-cost and high-performance 1.3-μm AlGaInAs-InP uncooled laser diodes

In this letter, we utilize a self-terminated oxide polish (STOP) planarization technique to fabricate high-yield, high-performance, low-cost, and uncooled 1.3-mum ridge-waveguide AlGaInAs-InP laser diodes (LDs). The STOP technique is superior to the polyimide planarization, which suffers from high-temperature sustainability. The LDs fabricated by the STOP technique exhibit threshold currents of 8.5 and 30.5 mA, and light output powers of 25.9 and 4.8 mW at 100 mA for 20degC and 110degC, respectively. The characteristic temperatures (T ₀) are 82.6 K from -30degC to 80degC and 55.9 K from 80degC to 110degC. Since the metal pad lies on a thick SiO₂ layer, the parasitic capacitance can be effectively lowered to 2 pF. The 3-dB modulation bandwidths of the LDs at 50 mA are 12.1 and 9.44 GHz at 20degC and 90degC, respectively