Demonstration of monolithic co-fabrication of Y₁Ba₂Cu₃O_7-δ and CMOS devices on the same sapphire substrate

Author

De La Houssaye, P.R. ; Burns, M.J. ; Russell, S.D. ; Garcia, Gonzalo Andres ; Lee, L.P.

Author_Institution

NCCOSC RDTE DIV, San Diego, CA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2139

Lastpage

2140

Abstract

Summary form only given. The authors report the first fabrication of active semiconductor and high-temperature superconducting (HTS) devices on the same substrate. CMOS transistors were fabricated on the same sapphire substrate as either YBCO flux-flow transistors (FFTs) or YBCO superconducting quantum interference devices (SQUIDs). All devices functioned as expected at 77 K without degradation, demonstrating that a compatible process has been found to monolithically integrate adjacent CMOS and HTS devices

Keywords

CMOS integrated circuits; SQUIDs; barium compounds; high-temperature superconductors; superconducting integrated circuits; yttrium compounds; 77 K; Al₂O₃; CMOS transistors; FFT; HTS devices; SQUID; Y₁Ba₂Cu₃O₇; active semiconductor; flux-flow transistors; high temperature superconducting device; monolithic cofabrication; monolithic integrated circuit; sapphire substrate; superconducting quantum interference devices; CMOS process; Degradation; Fabrication; Flexible printed circuits; High temperature superconductors; Interference; SQUIDs; Substrates; Superconducting devices; Yttrium barium copper oxide;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239826

Filename

239826

Demonstration of monolithic co-fabrication of Y1Ba2 Cu3O7-δ and CMOS devices on the same sapphire substrate

De La Houssaye, P.R. ; Burns, M.J. ; Russell, S.D. ; Garcia, Gonzalo Andres ; Lee, L.P.

jour

Demonstration of monolithic co-fabrication of Y₁Ba₂Cu₃O_7-δ and CMOS devices on the same sapphire substrate