Title :
Demonstration of monolithic co-fabrication of Y1Ba2 Cu3O7-δ and CMOS devices on the same sapphire substrate
Author :
De La Houssaye, P.R. ; Burns, M.J. ; Russell, S.D. ; Garcia, Gonzalo Andres ; Lee, L.P.
Author_Institution :
NCCOSC RDTE DIV, San Diego, CA
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The authors report the first fabrication of active semiconductor and high-temperature superconducting (HTS) devices on the same substrate. CMOS transistors were fabricated on the same sapphire substrate as either YBCO flux-flow transistors (FFTs) or YBCO superconducting quantum interference devices (SQUIDs). All devices functioned as expected at 77 K without degradation, demonstrating that a compatible process has been found to monolithically integrate adjacent CMOS and HTS devices
Keywords :
CMOS integrated circuits; SQUIDs; barium compounds; high-temperature superconductors; superconducting integrated circuits; yttrium compounds; 77 K; Al2O3; CMOS transistors; FFT; HTS devices; SQUID; Y1Ba2Cu3O7; active semiconductor; flux-flow transistors; high temperature superconducting device; monolithic cofabrication; monolithic integrated circuit; sapphire substrate; superconducting quantum interference devices; CMOS process; Degradation; Fabrication; Flexible printed circuits; High temperature superconductors; Interference; SQUIDs; Substrates; Superconducting devices; Yttrium barium copper oxide;
Journal_Title :
Electron Devices, IEEE Transactions on
