Normal incidence detector using Ge quantum-well structures grown on Si (100)

Author

Lee, Chi-Kwan ; Chun, S.K. ; Wang, K.L.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2141

Lastpage

2142

Abstract

Summary form only given. The normal incidence detection of light by Sb δ-doped Ge/Si_1-xGe_x multiple quantum well (MQW) structures grown on Si(100) substrates has been demonstrated. The observation of strong electron intersubband infrared absorption for δ-doped Ge/Si_1-xGe_x MQW structures grown on Si (100) substrates is reported. The principle is to use tilted ellipsoids of Ge L valleys to obtain normal incidence transition. The structure is grown by Si molecular beam epitaxy (Si-MBE) and Sb is doped by thermal evaporation. The intersubband absorption is shown to be allowed for the optical field components both perpendicular and parallel to the quantum wells due to the tilted ellipsoids of constant energy surfaces

Keywords

Ge-Si alloys; elemental semiconductors; germanium; infrared detectors; infrared spectra of inorganic solids; molecular beam epitaxial growth; photodetectors; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; δ-doped structure; (100) surface; Ge-Si_1-xGe_x multiple quantum well structure; MBE; MQW structures; Si molecular beam epitaxy; Si substrate; constant energy surfaces; electron intersubband infrared absorption; normal incidence detector; optical field components; thermal evaporation; tilted ellipsoids; Bipolar transistors; Circuit testing; Detectors; Indium phosphide; Leakage current; Photonic band gap; Quantum wells; Substrates; Temperature; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239829

Filename

239829