• DocumentCode
    960571
  • Title

    Derivation of simple expressions for interelectrode capacitances of i.g.f.e.t.s as a function of bias condition

  • Author

    Armstrong, G.A. ; Magowan, J.A.

  • Author_Institution
    Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
  • Volume
    7
  • Issue
    10
  • fYear
    1971
  • Firstpage
    281
  • Lastpage
    283
  • Abstract
    A general theory for the derivation of the intrinsic interelectrode capacitances of an insulated-gate field-effect transistor operating under current-flow conditions is presented. The theory takes into account the charge distribution within the device. Results of computations using a 1-dimensional analysis are assessed by comparison with those obtained from a 2-dimensional analysis.
  • Keywords
    capacitance; field effect transistors; IGFETS; MOST; interelectrode capacitances; switching speed;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710193
  • Filename
    4244552
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=960571