Title :
Derivation of simple expressions for interelectrode capacitances of i.g.f.e.t.s as a function of bias condition
Author :
Armstrong, G.A. ; Magowan, J.A.
Author_Institution :
Queen´s University of Belfast, Department of Electrical & Electronic Engineering, Belfast, UK
Abstract :
A general theory for the derivation of the intrinsic interelectrode capacitances of an insulated-gate field-effect transistor operating under current-flow conditions is presented. The theory takes into account the charge distribution within the device. Results of computations using a 1-dimensional analysis are assessed by comparison with those obtained from a 2-dimensional analysis.
Keywords :
capacitance; field effect transistors; IGFETS; MOST; interelectrode capacitances; switching speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710193
