Background limited infrared hot-electron transistor at 77 K

Author

Kuan, C.H. ; Tsui, D.C. ; Choi, K.K. ; Chang, W.H. ; Chang, Carole ; Farley, C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., NJ

Volume

40

Issue

11

fYear

1993

fDate

11/1/1993 12:00:00 AM

Firstpage

2142

Lastpage

2143

Abstract

Summary form only given. The authors report a background-limited photodetector (BLIP) infrared hot-electron transistor (IHET) with current density compatible with the read-out circuit at 77 K. To reduce J_D (dark current density), a novel GaAs/Al_xGa_1-xAs quantum-well infrared photodetector (QWIP), in which the aluminum molar ratio of the barriers increases in three steps, has been designed. This barrier is able to suppress the dark current due to thermally assisted tunneling by providing a thicker effective when the structure is under bias. The remaining J_D is also largely eliminated by designing a bandpass filter placed adjacent to the QWIP

Keywords

III-V semiconductors; aluminium compounds; current density; gallium arsenide; hot electron transistors; infrared detectors; photodetectors; tunnelling; 77 K; Al molar ratio; BLIP; GaAs-Al_xGa_1-xAs quantum well infrared photodetector; IHET; QWIP; background limited infrared hot electron transistor; background-limited photodetector; bandpass filter; current density; dark current; read-out circuit; semiconductor; thermally assisted tunneling; Detectors; Doping; Electromagnetic wave absorption; Ellipsoids; Fourier transforms; Molecular beam epitaxial growth; Optical devices; Optical polarization; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.239831

Filename

239831