Title :
Background limited infrared hot-electron transistor at 77 K
Author :
Kuan, C.H. ; Tsui, D.C. ; Choi, K.K. ; Chang, W.H. ; Chang, Carole ; Farley, C.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ
fDate :
11/1/1993 12:00:00 AM
Abstract :
Summary form only given. The authors report a background-limited photodetector (BLIP) infrared hot-electron transistor (IHET) with current density compatible with the read-out circuit at 77 K. To reduce JD (dark current density), a novel GaAs/Alx Ga1-xAs quantum-well infrared photodetector (QWIP), in which the aluminum molar ratio of the barriers increases in three steps, has been designed. This barrier is able to suppress the dark current due to thermally assisted tunneling by providing a thicker effective when the structure is under bias. The remaining JD is also largely eliminated by designing a bandpass filter placed adjacent to the QWIP
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; hot electron transistors; infrared detectors; photodetectors; tunnelling; 77 K; Al molar ratio; BLIP; GaAs-AlxGa1-xAs quantum well infrared photodetector; IHET; QWIP; background limited infrared hot electron transistor; background-limited photodetector; bandpass filter; current density; dark current; read-out circuit; semiconductor; thermally assisted tunneling; Detectors; Doping; Electromagnetic wave absorption; Ellipsoids; Fourier transforms; Molecular beam epitaxial growth; Optical devices; Optical polarization; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
