Title :
Simulation of proton-induced local lifetime reduction in 10 kV diodes
Author :
Brammer, Ronald ; Hallén, Anders ; Håkansson, Jan
Author_Institution :
ABB Drives, Vasteras, Sweden
fDate :
11/1/1993 12:00:00 AM
Abstract :
The results of simulation of localized charge carrier lifetime reductions in 10-kV power diodes are presented. These results are compared to experiments with proton irradiation as a means for local lifetime reduction. It is shown that the range straggling inherent in the irradiation process must be taken into account in the simulations
Keywords :
carrier lifetime; power electronics; proton effects; semiconductor device models; semiconductor diodes; 10 kV; 1D program; Q-V curves; SEMIACE; localized charge carrier lifetime reductions; power diodes; proton irradiation; proton-induced local lifetime reduction; range straggling; simulation; Bipolar transistors; Diodes; Electron devices; Electron mobility; Impurities; Photonic band gap; Silicon; Solid modeling; Solid state circuits; Steady-state;
Journal_Title :
Electron Devices, IEEE Transactions on
