Title :
A hybrid silicon carbide differential amplifier for 350°C operation
Author :
Tomana, Miro ; Johnson, R. Wayne ; Jaeger, Richard C. ; Dillard, William C.
Author_Institution :
Dept. of Electr. Eng., Auburn Univ., AL, USA
fDate :
8/1/1993 12:00:00 AM
Abstract :
An operational amplifier has been designed, fabricated, and tested at 350°C using silicon carbide MESFET pairs and thick-film hybrid technology. The amplifier was successfully tested over the temperature range of 25-350°C. The gain of the amplifier was greater than 60 dB, the common-mode rejection ratio was greater than 55 dB, and the offset voltage varied from 139 to 159 mV over the entire temperature range. The results demonstrate the feasibility of high-temperature circuit design and assembly using this approach
Keywords :
Schottky gate field effect transistors; differential amplifiers; hybrid integrated circuits; linear integrated circuits; operational amplifiers; silicon compounds; thick film circuits; 139 to 159 mV; 25 to 350 degC; 60 dB; CMRR; MESFET pairs; SiC; common-mode rejection ratio; differential amplifier; high-temperature circuit design; offset voltage; operational amplifier; thick-film hybrid technology; Differential amplifiers; MESFETs; Operational amplifiers; Photonic band gap; Silicon carbide; Space technology; Temperature distribution; Testing; Thermal conductivity; Thick films;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
