• DocumentCode
    961206
  • Title

    Extreme Radiation Tolerance of High Temperature Solid-State Microelectronics

  • Author

    Palmer, David W. ; Draper, Bruce L. ; Carlson, Gary A.

  • Author_Institution
    Sandia Nat. Lab., NM
  • Volume
    4
  • Issue
    4
  • fYear
    1981
  • fDate
    12/1/1981 12:00:00 AM
  • Firstpage
    466
  • Lastpage
    471
  • Abstract
    The nuclear and space industries require electronics with higher tolerance to radiation than that currently available. The recently developed 300°C electronics technology based on junction field-effect transistor (JFET) thick film hybrids was tested up to 109rad (Si) in a gamma source and 1016neutrons/cm2. Circuits and individual components from this technology all survived this total dose although some devices required 1 h of annealing at 200°C or 300°C to regain functionality. This technology used with real time annealing should function to levels greater than 1010rad(Si) and 1016neutrons/cm2.
  • Keywords
    Hybrid integrated circuit thermal factors; Hybrid integrated-circuit radiation effects; JFET integrated circuits; Aerospace industry; Annealing; Electronic equipment testing; Electronics industry; Microelectronics; Neutrons; Nuclear electronics; Solid state circuits; Space technology; Temperature;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1981.1135835
  • Filename
    1135835
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=961206