Title :
Carrier-recombination statistics in a 2-level trapping system
Author :
Buckingham, M.J. ; Faulkner, E.A.
Author_Institution :
University of Reading, J. J. Thomson Laboratory, Reading, UK
Abstract :
When there is substantial interaction between two trap levels in the band gap, the carrier recombination in the depletion layer of a silicon p¿n junction does not follow conventional Shockley¿Read¿Hall statistics. Such a system is capable of producing a current/voltage relationship approximating to the form I¿ exp (eV/1.5 kT).
Keywords :
band structure; semiconductors; statistical analysis; statistics; Si p-n junction; band structure; carrier recombination statistics; crystal electron states; semiconductors; statistics; two level trapping system;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710229
