A Low LO Power Mixer Utilizing the Body Effect

Author

Kang, Ho Suk ; Lee, Sang Geun ; Park, Chul Soon

Author_Institution

Inf. & Commun. Univ., Daejeon

Volume

17

Issue

11

fYear

2007

Firstpage

799

Lastpage

801

Abstract

We propose a single-stacked CMOS mixer that can operate at low local oscillator (LO) power condition with a new switching mechanism. Gating the body terminal makes it possible for the mixer to operate in a more ideal switching mode by utilizing the body effect. Biasing at near pinch-off region gives rise to beneficial aspect, low power dissipation. This circuit is composed of all PMOS transistors which draw only 0.275 mA from a supply voltage of 1.8 V. This circuit features gain and noise enhancement characteristic, low power consumption, and simple topology. The proposed mixer achieves conversion gain of 18 dB, noise figure of 9.1 dB with 0 dBm LO power, and power consumption as low as 0.5 mW.

Keywords

CMOS integrated circuits; mixers (circuits); LO power mixer; PMOS transistors; body effect; current 0.275 mA; gain 18 dB; gating; ideal switching mode; local oscillator; low power dissipation; noise enhancement characteristic; noise figure 9.1 dB; power 0.5 mW; single-stacked CMOS mixer; voltage 1.8 V; Circuit noise; Circuit topology; Energy consumption; Gain; Local oscillators; Low voltage; Power dissipation; Radio frequency; Transceivers; Voltage-controlled oscillators; Active mixer; body effect; local oscillator (LO) power; power dissipation;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2007.908058

Filename

4374128