Title :
Contribution of the surface effects on the white noise of silicon bipolar transistors
Author :
Martin, J.C. ; Blasquez, G. ; Caminade, J.
Author_Institution :
CRNS, Laboratoire d´Automatique et de ses Applications Spatiales, Toulouse, France
Abstract :
It is shown that the recombination noise generated in the surface regions of silicon bipolar transistors cannot be predicted by Lauritzen´s theory. Experiments are reported, giving the contribution of the surface recombination noise to the total white noise. The influence of the biasing level on the n¿p¿n and p¿n¿p types is discussed.
Keywords :
bipolar transistors; elemental semiconductors; noise; semiconductor materials; silicon; surface phenomena; transistors; white noise; Lauritzen´s theory; Si; biasing level influence; bipolar transistors; n-p-n; p-n-p; surface recombination noise; white noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710234
