• DocumentCode
    962153
  • Title

    Fringing Field Effect in MOS Devices

  • Author

    Pattanayak, Deva N. ; Poksheva, John G. ; Downing, Robert W. ; Akers, Lex A.

  • Author_Institution
    Rockwell International, Anaheim, CA, USA
  • Volume
    5
  • Issue
    1
  • fYear
    1982
  • fDate
    3/1/1982 12:00:00 AM
  • Firstpage
    127
  • Lastpage
    131
  • Abstract
    Fringing field action in metal-oxide-semiconductor (MOS) devices is discussed theoretically. Line capacitance coefficients on silicon-on-sapphire (SOS) and bulk configurations are determined from a three-dimensional model. Increase of threshold voltage of narrow-width devices due to fringing is described.
  • Keywords
    MOS devices; Silicon-on-insulator devices; Conductors; Dielectric constant; Geometry; Helium; Integral equations; Integrated circuit interconnections; MOS devices; Parasitic capacitance; Threshold voltage; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/TCHMT.1982.1135931
  • Filename
    1135931
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962153