Title :
Spectral linewidth reduction (580 kHz) in structure-optimised 1.5 mu m butt-jointed distributed Bragg reflector lasers
Author :
Kano, F. ; Tohmori, Y. ; Kondo, Yuta ; Nakao, Masahiro ; Fukuda, Motohisa ; Oe, Katsutoshi
Author_Institution :
NTT Opto-Electron. Labs., Atsugi, Japan
fDate :
5/25/1989 12:00:00 AM
Abstract :
Spectral linewidth reduction due to structural optimisation is studied in butt-jointed DBR lasers. It is theoretically shown that a laser structure with passive DBR regions on both sides of an active region is effective in reducing the linewidth.. Based on theoretical calculation, 1.5 mu m butt-joined DBR lasers are fabricated entirely by MOVPE growth. Linewidth is reduced to 580 kHz in structure-optimised 1.5 mu m butt-jointed DBR lasers.
Keywords :
distributed Bragg reflector lasers; semiconductor growth; semiconductor junction lasers; spectral line breadth; vapour phase epitaxial growth; 1.5 micron; MOVPE growth; active region; butt-jointed distributed Bragg reflector lasers; passive DBR regions; spectral linewidth reduction; structural optimisation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890480
