DocumentCode
962279
Title
Low-frequency current oscillations observed with high-resistivity nonohmic GaAs devices
Author
Kaman, R. ; Grant, Robert ; Jaskolski, S.V.
Author_Institution
Marquette University, Solid-State Electronics Laboratory, Milwaukee, USA
Volume
7
Issue
13
fYear
1971
Firstpage
373
Lastpage
374
Abstract
Low-frequency small-amplitude current oscillations have been observed with devices constructed of high-resistivity n type bulk GaAs. The oscillations occurred simultaneously with current saturation with low threshold fields (200¿1000 V/cm). The contact junctions made to the oscillating devices appear to be decidedly nonohmic, contrary to what other researchers observing the same type of oscillations have reported for their devices.
Keywords
oscillations; semiconductor devices; semiconductor materials; 200 to 1000 voltage per centimeter; bulk resistivity; bulk semiconductor materials; characteristics; low frequency current oscillations; n-GaAs; noise; nonohmic devices; trapping effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19710255
Filename
4244723
Link To Document