• DocumentCode
    962279
  • Title

    Low-frequency current oscillations observed with high-resistivity nonohmic GaAs devices

  • Author

    Kaman, R. ; Grant, Robert ; Jaskolski, S.V.

  • Author_Institution
    Marquette University, Solid-State Electronics Laboratory, Milwaukee, USA
  • Volume
    7
  • Issue
    13
  • fYear
    1971
  • Firstpage
    373
  • Lastpage
    374
  • Abstract
    Low-frequency small-amplitude current oscillations have been observed with devices constructed of high-resistivity n type bulk GaAs. The oscillations occurred simultaneously with current saturation with low threshold fields (200¿1000 V/cm). The contact junctions made to the oscillating devices appear to be decidedly nonohmic, contrary to what other researchers observing the same type of oscillations have reported for their devices.
  • Keywords
    oscillations; semiconductor devices; semiconductor materials; 200 to 1000 voltage per centimeter; bulk resistivity; bulk semiconductor materials; characteristics; low frequency current oscillations; n-GaAs; noise; nonohmic devices; trapping effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710255
  • Filename
    4244723