DocumentCode
962511
Title
Ti Compound Formation During Ti Diffusion in LiNbO3
Author
Armenise, M. Nicola ; Canali, Claudio ; De Sario, M. ; Carnera, Alberto ; Mazzoldi, Paolo ; Celotti, Giancarlo
Author_Institution
Instituto Elettrotecnico, Bari, Italy
Volume
5
Issue
2
fYear
1982
fDate
6/1/1982 12:00:00 AM
Firstpage
212
Lastpage
216
Abstract
Scanning electron microscopy (SEM), backscattering spectrometry, and X-ray diffraction were used to study the initial steps of Ti diffusion into both Y-cut and Z-cut LiNbO3 substrates annealed in dry 02 atmosphere. The Ti oxidation process observed at intermediate temperatures (300°C-500°C) is followed at higher temperature treatments (950°C, 30-60 min) by an epitaxial growth of the (TixNb l_x)O2 phase, which behaves as a source for Ti diffusion ´and consequently is consumed for longer annealing times (950°C, 20 h). For this compound an x value of 0.60 + 0.05 was obtained from experimental results.
Keywords
Optical planar waveguides; Planar optical waveguide; Annealing; Atmosphere; Backscatter; Epitaxial growth; Oxidation; Scanning electron microscopy; Spectroscopy; Substrates; Temperature; X-ray diffraction;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1982.1135966
Filename
1135966
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