• DocumentCode
    962581
  • Title

    Mobility reduction parameters in short-channel MOSFETs

  • Author

    Lee, J.I. ; Lee, Matthew B. ; Kang, K.N. ; Park, K.O.

  • Author_Institution
    Optical Electron. Lab., Korea Adv. Inst. of Sci. & Technol., Cheongryang, Seoul, South Korea
  • Volume
    25
  • Issue
    11
  • fYear
    1989
  • fDate
    5/25/1989 12:00:00 AM
  • Firstpage
    753
  • Lastpage
    754
  • Abstract
    The reduction of the maximum field effect mobility in short-channel MOSFETs is attributed to the channel-length-dependent attenuation coefficient theta and the difference between the threshold voltage and the gate voltage which gives the maximum transconductance. The low field mobility mu 0 is found to be independent of the channel length.
  • Keywords
    carrier mobility; insulated gate field effect transistors; channel-length-dependent attenuation coefficient; gate voltage; low field mobility; maximum field effect mobility; maximum transconductance; mobility reduction parameters; short-channel MOSFETs; threshold voltage; voltage difference;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890509
  • Filename
    24121
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=962581