DocumentCode
962648
Title
Evaluation of the Schottky Barrier Parameters in the Micron-Size Metal-Semiconductor Contacts
Author
Averin, S.V. ; Lyubchenko, V.E.
Author_Institution
Russian Acad. of Sci., Moscow
Volume
17
Issue
11
fYear
2007
Firstpage
787
Lastpage
789
Abstract
We show that under certain conditions the submillimeter wave detector response of a Schottky barrier diode is a linear function of applied bias and allows evaluation of the barrier height and the near-surface doping level of semiconductor in the micron-size Schottky barrier contacts.
Keywords
Schottky barriers; Schottky diodes; semiconductor doping; semiconductor-metal boundaries; submillimetre wave detectors; Schottky barrier diode; Schottky barrier parameters; barrier height evaluation; micronsize metal-semiconductor contacts; near-surface semiconductor doping level; submillimeter wave detector response; Capacitance; Detectors; Frequency measurement; Satellite broadcasting; Schottky barriers; Schottky diodes; Semiconductor device doping; Semiconductor diodes; Signal analysis; Voltage; Barrier height; Schottky barriers; millimeter and submillimeter wave detectors; mixers; responsivity; semiconductor diodes;
fLanguage
English
Journal_Title
Microwave and Wireless Components Letters, IEEE
Publisher
ieee
ISSN
1531-1309
Type
jour
DOI
10.1109/LMWC.2007.908054
Filename
4375330
Link To Document