DocumentCode
962676
Title
Growth of A-15 Nb3 Ge by co-evaporation
Author
Sigsbee, R.A.
Author_Institution
General Electric Company, Schenectady, N.Y.
Volume
13
Issue
1
fYear
1977
fDate
1/1/1977 12:00:00 AM
Firstpage
307
Lastpage
310
Abstract
Enhanced Tc ´s (>21°K), Tc widths and resistivity ratios result when controlled amounts of O2 are admitted during film growth. O2 levels ≈ 5 × 10-7mm Hg stabilize the Nb3 Ge phase over a wide range of Nb/Ge flux ratios for films grown at 6A/sec and 1000°C.
Keywords
Conducting films; Superconducting materials; Conductivity; Germanium; Mercury (metals); Niobium compounds; Substrates; Superconducting films; Superconducting thin films; Temperature measurement; Testing; Thermodynamics;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1977.1059479
Filename
1059479
Link To Document