DocumentCode :
962676
Title :
Growth of A-15 Nb3Ge by co-evaporation
Author :
Sigsbee, R.A.
Author_Institution :
General Electric Company, Schenectady, N.Y.
Volume :
13
Issue :
1
fYear :
1977
fDate :
1/1/1977 12:00:00 AM
Firstpage :
307
Lastpage :
310
Abstract :
Enhanced Tc´s (>21°K), Tcwidths and resistivity ratios result when controlled amounts of O2are admitted during film growth. O2levels ≈ 5 × 10-7mm Hg stabilize the Nb3Ge phase over a wide range of Nb/Ge flux ratios for films grown at 6A/sec and 1000°C.
Keywords :
Conducting films; Superconducting materials; Conductivity; Germanium; Mercury (metals); Niobium compounds; Substrates; Superconducting films; Superconducting thin films; Temperature measurement; Testing; Thermodynamics;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1977.1059479
Filename :
1059479
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=962676
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