DocumentCode :
962697
Title :
Fast Lithography Image Simulation By Exploiting Symmetries in Lithography Systems
Author :
Yu, Peng ; Qiu, Weifeng ; Pan, David Z.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX
Volume :
21
Issue :
4
fYear :
2008
Firstpage :
638
Lastpage :
645
Abstract :
Lithography simulation has been widely used in many applications, such as optical proximity correction, in the semiconductor industry. It is important to reduce the runtime of such simulations. Dedicated hardware and parallel computation have been used to reduce the runtime. For full chip simulation, the simulation method, optimal coherent approximations (OCAs), is widely used. But, it has not been improved since its first inception. In this paper, we improve it by considering the symmetric properties of lithography systems. The new method could speed up the runtime by 2times without loss of accuracy. We demonstrate the speedup is applicable to vectorial imaging model as well. In case the symmetric properties do not hold strictly, the new method can be generalized such that it could still be faster than the old method.
Keywords :
image processing; photolithography; fast lithography image simulation; lithography systems; optical proximity correction; optimal coherent approximations; symmetric properties; Computational modeling; Computer industry; Concurrent computing; Electronics industry; Equations; Frequency domain analysis; Hardware; Lithography; Optical imaging; Runtime; Aerial simulation; lithography simulation; optimal coherent approximations (OCAs); symmetry; transmission cross coefficient (TCC);
fLanguage :
English
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
Publisher :
ieee
ISSN :
0894-6507
Type :
jour
DOI :
10.1109/TSM.2008.2005380
Filename :
4657435
Link To Document :
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