DocumentCode
962759
Title
Fabrication of Through-Wafer Via Conductors in Si by Laser Photochemical Processing
Author
Ehrlich, Daniel J. ; Silversmith, Donald J. ; Mountain, Robert W. ; Tsao, Jeff
Author_Institution
MIT, Lexington, MA, USA
Volume
5
Issue
4
fYear
1982
fDate
12/1/1982 12:00:00 AM
Firstpage
520
Lastpage
521
Abstract
A procedure for the fabrication of high-aspect-ratio through-wafer via conductors in Si is described. The technique is based on a rapid highly anistropic laser etching process followed by a two-step metallization. The surface area occupied by the via on the front, circuit side of the wafer, can be as small as 5 µm x 5 µm.
Keywords
Integrated circuit interconnections; Interconnections, Integrated circuits; Laser applications, materials processing; Silicon materials/devices; Chemical lasers; Circuits; Conductors; Gas lasers; Metallization; Optical device fabrication; Photochemistry; Surface emitting lasers; Wafer bonding; Wet etching;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1982.1135991
Filename
1135991
Link To Document