DocumentCode
962881
Title
A GaP MESFET for High Temperature Applications
Author
Weichold, Mark H. ; Eknoyan, O. ; Kao, Yung-Chung
Author_Institution
Texas A&M University, College Station, TX, USA
Volume
5
Issue
4
fYear
1982
fDate
12/1/1982 12:00:00 AM
Firstpage
342
Lastpage
344
Abstract
A process for fabricating GaP metal semiconductor field effect transistors (MESFET´s) capable of operating at temperatures of up to 295°C has been developed. The characteristics of the fabricated devices suggest a need for tighter control and further research involving channel doping and thickness uniformity as well as drain and source durability.
Keywords
Schottky-barrier FETs; Conducting materials; FETs; MESFETs; Photonic band gap; Schottky barriers; Semiconductor materials; Silicon; Substrates; Temperature; Voltage;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/TCHMT.1982.1136001
Filename
1136001
Link To Document