Title :
Three-level transferred-electron effects in InP
Author :
Rees, H.D. ; Hilsum, C.
Author_Institution :
Royal Radar Establisment, Great Malvern, UK
Abstract :
Revised estimates of the velocity/field characteristic of InP are made in the light of recent experimental evidence. A limiting oscillator efficiency of about 30% is predicted.
Keywords :
band structure; electron mobility; indium compounds; semiconductor materials; InP; band structure; electron mobility; limiting oscillator efficiency; semiconductor material; three level transferred electron effects; velocity/field characteristic;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19710294
