• DocumentCode
    963000
  • Title

    High-level asymptotic variation of transistor base resistance and current gain

  • Author

    Roulston, D.J. ; Chamberlain, S.G. ; Sehgal, J.

  • Author_Institution
    University of Waterloo, Electrical Engineering Department, Waterloo, Canada
  • Volume
    7
  • Issue
    15
  • fYear
    1971
  • Firstpage
    438
  • Lastpage
    440
  • Abstract
    Using a finite-section model for bipolar transistors with current-dependent base resistance and gain, high-current asymptotic variations of base resistance, gain and effective emitter width are studied, and useful analytic formulas are presented.
  • Keywords
    bipolar transistors; semiconductor device models; base resistance; bipolar transistors; current dependent base resistance; current gain; effective emitter; finite section model; gain; high level asymptotic variation; semiconductor device models; transistor base resistance; width;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19710295
  • Filename
    4244899
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=963000