Title :
Hydrogen sensing performance of Pt-oxide-GaN Schottky diode
Author :
Tsai, Y.Y. ; Lin, K.W. ; Chen, H.I. ; Hung, C.W. ; Chen, T.P. ; Liu, W.C.
Author_Institution :
Nat. Cheng-Kung Univ., Tainan
Abstract :
An interesting Pt-oxide-GaN MOS-type Schottky diode hydrogen sensor with high-sensitivity hydrogen detection over a wide operating temperature regime is demonstrated. Experimentally, a voltage shift of 264.4 mV at a forward current of 1 mA is obtained under 5040 ppm H2/air gas. Also, a large current variation of 0.89 mA in magnitude between air and 5040 ppm H2/air gas is observed under a forward voltage of 0.2 V. Under an inert environment (N2), a so-called Temkin isotherm can be used to interpret the hydrogen adsorption behaviour at the Pt-oxide interface.
Keywords :
MIS devices; Schottky diodes; gallium compounds; platinum; sensors; MOS-type Schottky diode hydrogen sensor; Pt-JkO-GaN; Temkin isotherm; current variation; high-sensitivity hydrogen detection; hydrogen adsorption behaviour; inert environment; voltage 0.2 V; voltage shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20072041
