1.54 lm GaSb/AlGaSb multi-quantum-well monolithic laser at 77 K grown on miscut Si substrate using interfacial misfit arrays

Author

Jallipalli, A. ; Kutty, M.N. ; Balakrishnan, G. ; Tatebayashi, J. ; Nuntawong, N. ; Huang, S.H. ; Dawson, L.R. ; Huffaker, D.L. ; Mi, Z. ; Bhattacharya, P.

Author_Institution

Univ. of New Mexico, Albuquerque

Volume

43

Issue

22

fYear

2007

Abstract

A GaSb quantum-well (QW) laser diode grown monolithically on a 5deg miscut Si (001) substrate is presented. The III-Sb epi-structure is grown monolithically on the miscut Si substrate via a thin (50 nm) AlSb nucleation layer. The 13% lattice mismatch between AlSb and Si is accommodated by a self-assembled 2D array of interfacial misfit dislocations (IMF). The 5deg miscut geometry enables simultaneous IMF formation and anti-phase domain suppression. The 1 mm times 100 mum GaSb QW laser diode operates under pulsed conditions at 77 K with a threshold current density of 2 kA/cm² and a maximum peak power of ~20 mW. Furthermore, the device is characterised by a 9.1 Omega forward resistance and a leakage current density of 0.7 A/cm² at -5 V.

Keywords

III-V semiconductors; aluminium compounds; dislocation nucleation; gallium compounds; interface structure; quantum well lasers; self-assembly; silicon; substrates; GaSb-AlGaSb-Si; interfacial misfit arrays; interfacial misfit dislocations; lattice mismatch; miscut Si (001) substrate; multi-quantum-well monolithic laser; power 20 mW; quantum-well laser diode; resistance 9.1 ohm; self-assembled 2D array; size 1 mm; size 100 mum; size 50 nm; temperature 77 K; voltage 5 V; wavelength 1.54 mum;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20072441

Filename

4375449